HT Semiconductor 2sa1661 free download

File name 2sa1661.pdf

2SA1 661 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES Small Flat Package 2. COLLECTOR High Current Application 3. EMITTER High Voltage High Transition Frequency MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current -0.8 A PC Collector Power Dissipation 500 mW RJA Thermal Resistance From Junction To Ambient 250 /W Tj Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= -1mA,IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -120 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA,IC=0 -5 V Collector cut-off current ICBO VCB=-120V,IE=0 -100 nA Emitter cut-off current IEBO VEB=-5V,IC=0 -100 nA DC current gain hFE VCE=-5V, IC=-100mA 80 240 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA -1 V Base-emitter voltage VBE VCE=-5V, IC=-500mA -1 V Collector output capacitance Cob VCB=-10V,IE=0, f=1MHz 30 pF VCE=-5V,IC=-0.1A, Transition frequency fT 120 MHz